3,801 technical terms and definitions
semiconductor plasma, plasma fundamentals, debye length, plasma frequency, electron temperature, glow discharge
Semiconductor Manufacturing Process: Plasma Physics Mathematical Modeling 1. The Physical Context Semiconductor manufacturing relies on low-temperature, non-equilibrium plasmas…
plasma etching, RIE, reactive ion etching, ICP etching, plasma physics and etching
Dry etching is the Coburn–Winters synergy: ion bombardment perpendicular to the wafer surface enhances the chemical etch rate of silicon in XeF_2 from 1 nm/min to 55 nm/min…
Plasma Physics, Discharge Modeling, and Plasma Processing Science 1. Executive Summary & Physics of Low-Temperature Plasmas Low-temperature plasmas (LTPs) serve as indispensable…
icp ccp, plasma etch icp ccp, icp plasma etching, ccp plasma etching, inductively coupled plasma, capacitively coupled plasma, plasma science, semiconductor plasma science, plasma technology, plasma fundamentals, plasma generation
Plasma etching and reactor physics govern the dry, anisotropic material removal processes essential for patterning nanoscale semiconductor features. Driven by radio-frequency…
icp ccp, plasma etch icp ccp, icp plasma etching, ccp plasma etching, inductively coupled plasma, capacitively coupled plasma, plasma source technology ICP CCP remote plasma etch deposition
Plasma etching and reactor physics govern the dry, anisotropic material removal processes essential for patterning nanoscale semiconductor features. Driven by radio-frequency…
pdip, packaging
Plastic DIP is the standard dual in-line through-hole package with plastic encapsulation for cost-effective mainstream use - it is common in legacy products, prototyping…
ppga, packaging
Plastic PGA is the pin grid array package implemented with plastic substrate or encapsulation for lower-cost high-pin connectivity - it offers PGA-style pin density with more…
packaging
Plunger is the mechanical element in transfer molding that applies force to push heated compound from the pot into cavities - its motion profile directly affects flow stability…
p-n junction diode, depletion region, built-in potential, diode physics, semiconductor junction
pn junction is the boundary where p-type and n-type semiconductor meet, creating a depletion region and built-in electric field. It is the device-physics foundation of diodes…
handheld calculator, calculator chip, Busicom, consumer electronics, early IC product
The pocket calculator is the handheld electronic calculating device that emerged in the early 1970s, one of the first mass-market consumer products built on integrated circuits…
packaging
Pocket spacing is the center-to-center distance between consecutive component pockets in carrier tape - it defines feeder indexing step and pick timing synchronization. What Is…
point contact 1947 remove material damaged cutting and grinding, diffusion limited etching self smoothing boundary layer, surface roughness exponential decay etch time
Chemically Etch the Germanium: A Self-Smoothing Process, Not Just a Depth Removed Step three left behind a ground surface whose roughness has to shrink well below…
point contact 1947 create the semiconductor body, spreading resistance point contact bulk germanium, hemispherical current spreading block size margin
Cut a Small Block or Disc: Sizing a Body Around a Resistance Problem, Not a Junction Depth Neither a grown-junction nor an alloy-junction wafer's thickness problem applies here…
point contact 1947 restore the active surface, metallization contamination threshold re etch, line of sight evaporation deposition shielding
Re-Etch the Exposed Upper Face: A Step That Only Fires If a Condition Is Actually Met Step four's etch was mandatory for every piece that reached it — this step is genuinely…
point contact 1947 high reverse voltage crystal rectifier, reverse breakdown voltage doping concentration, rectification ratio metal semiconductor barrier
Select N-Type Germanium: A Material Chosen for a Diode, Not Yet a Transistor This is the first of twenty-five steps describing the original 1947 Bell Labs point-contact transistor…
point contact transistor device process flow, point-contact transistor fabrication, point contact resistor device process flow, CP-4 etch germanium, whisker forming process, Bardeen Brattain fabrication steps
Point-Contact Transistor Device Process Flow: Fabrication, Surface Inversion & Electrical Forming The point-contact transistor — invented at Bell Laboratories in December 1947…
point-of-care diagnostic chip yield prediction, point-of-care diagnostic chip, diagnostic chip yield, chip yield prediction, point-of-care diagnostic, diagnostic chip
Point-of-Care Diagnostic Chip Yield Prediction with Machine Learning Introduction & Motivation Point-of-Care Diagnostic Chip Yield Prediction with Machine Learning addresses…
electrostatic poisson equation, elliptic boundary value problem, poisson numerical methods, semiconductor poisson solver, device electrostatics equation
The Poisson equation connects a distributed source to a scalar potential whose gradient produces a field. In its most useful engineering form, -∇·(kappa∇ u)=f on a domain Omega…
polarized raman spectroscopy, polarization resolved raman, angle resolved polarized raman, raman polarization selection rules, raman tensor analysis, polarized raman metrology
Polarized Raman spectroscopy turns a vibrational spectrum into an orientation-sensitive experiment. The laser polarization prepares a particular electric-field direction…
chemical mechanical polishing, CMP, wafer polishing, CMP slurry, Kaufman 1991 tungsten CMP, dishing and erosion, planarization
Polishing, in semiconductor manufacturing, means chemical mechanical polishing: pressing a surface against a rotating pad wetted with a slurry that combines abrasive particles…
cvd polysilicon deposition, polycrystalline silicon deposition, silane polysilicon cvd, undoped polysilicon deposition, polysilicon grain size, polysilicon nucleation, polysilicon surface roughness, polysilicon deposition temperature
CVD polysilicon deposition creates a microstructure, not merely a silicon thickness. A film called “poly” is an evolving population of nuclei, grains, grain boundaries, texture…
packaging
Polyimide die attach is the die-attach approach using polyimide-based adhesive systems for high-temperature and chemically robust package environments - it is selected when…
poly si gate, lpcvd polysilicon, in situ doped polysilicon, amorphous silicon deposition
Polysilicon Deposition and Doping is the foundational CMOS process module that deposits thin films of polycrystalline silicon using LPCVD (Low-Pressure Chemical Vapor Deposition)…
polysilicon deposition grain size prediction machine learning, polysilicon deposition, grain size prediction, lpcvd, polysilicon deposition grain size prediction
Polysilicon Deposition Grain Size Prediction with Machine Learning Introduction & Motivation Polysilicon Deposition Grain Size Prediction with Machine Learning addresses a central…
poly doping, poly etch, gate poly process, poly critical dimension, gate definition
Polysilicon Gate Deposition and Patterning is the CMOS process module that deposits and patterns the doped polysilicon (poly) layer that serves as the gate electrode…
ellipsometric porosimetry, thin film porosimetry, porosity metrology, pore size distribution, low-k porosimetry, nanoporous film characterization
Porosimetry determines how much void space a material contains, which pores are accessible, how filling and emptying proceed, and what pore-size or connectivity model is…
photoresist, negative resist, photolithography, resist development, patterning stencil
Positive photoresist is a light-sensitive coating used in photolithography in which the regions exposed to light become soluble in the developer and wash away, leaving resist only…
PAS metrology, positron annihilation lifetime spectroscopy, PALS spectroscopy, Doppler broadening positron spectroscopy, slow positron beam, positronium porosimetry
Positron annihilation spectroscopy uses implanted positrons as probes of electron momentum and open volume in solids. After losing kinetic energy, a positron diffuses through…
post-apply bake, pab, lithography
Post-Apply Bake (PAB) Post-apply bake (PAB) is the controlled thermal conditioning step performed after a liquid photoresist or other spin-on film is coated and edge-treated…
wafer backgrind thickness uniformity prediction, wafer backgrind thickness, backgrind thickness uniformity, thickness uniformity prediction, wafer backgrind
Wafer Backgrind Thickness Uniformity Prediction with Machine Learning Introduction & Motivation Wafer Backgrind Thickness Uniformity Prediction with Machine Learning addresses…
post-exposure bake, peb, lithography
Post-Exposure Bake (PEB) Post-exposure bake (PEB) is the controlled thermal step between exposure and development that converts a latent chemical image into a developable resist…
pmc, packaging
Post-mold cure is the secondary thermal process applied after molding to complete resin crosslinking and stabilize material properties - it improves mechanical, thermal…
post silicon era, what is post silicon era, beyond silicon, post-silicon computing, carbon electronics, spintronics, 2d semiconductors, quantum computing
The post-silicon era describes the shift already underway where bulk silicon stops being the only active switching material in a chip and becomes, instead, the host substrate that…
packaging
Pot is the reservoir section in transfer molding where preheated compound is loaded before being pushed into runner channels - its geometry and thermal behavior influence compound…
ir drop, power grid, power integrity, pdn analysis
Power Distribution Networks and on-chip power grid architectures constitute the physical and electrical infrastructure engineered to deliver stable supply voltages and ground…
chip power, gpu power, dynamic power, static power, tdp, datacenter power
Power consumption is the rate at which a chip, board, rack, or facility draws electrical energy, measured in watts. Power sets performance, cooling, packaging, reliability, rack…
power delivery for chiplet systems and decoupling placement, power delivery chiplet, delivery chiplet systems, chiplet systems decoupling, systems decoupling placement
Power Delivery for Chiplet Systems and Decoupling Placement Introduction & Motivation Power Delivery for Chiplet Systems and Decoupling Placement addresses a central problem…
pdn, chip power network, power distribution, power grid impedance
Power Distribution Networks and on-chip power grid architectures constitute the physical and electrical infrastructure engineered to deliver stable supply voltages and ground…
PDN, on-chip power grid, decap, voltage regulation module
Power Distribution Networks and on-chip power grid architectures constitute the physical and electrical infrastructure engineered to deliver stable supply voltages and ground…
power converter, power semiconductor switching, energy conversion, power electronic system
Power electronics. converts, conditions and controls electrical energy with semiconductor devices operated mainly as switches. Instead of dissipating excess voltage like a linear…
ir drop analysis, power grid design, decoupling capacitor placement, em electromigration power
Power Distribution Networks and on-chip power grid architectures constitute the physical and electrical infrastructure engineered to deliver stable supply voltages and ground…
pmic architecture, voltage regulator topology, power converter efficiency, battery management semiconductor
Power Management IC (PMIC) Design — Voltage Regulation and Energy Conversion Architectures Power Management Integrated Circuits (PMICs) regulate, convert, and distribute…
pmic voltage regulator, ldo regulator design, dc dc buck converter, on chip power management
Power Management IC (PMIC) Design is the analog/mixed-signal discipline that creates the voltage regulators, power sequencers, battery chargers, and power-good monitors required…
trench gate mosfet process, body region power mos, drift region doping, power device threshold voltage
Power MOSFET is the transistor optimized not for logic switching speed but for efficiently conducting large currents (1–1000 A) at high voltages (20–1200 V) with minimal…
power semiconductor fabrication, vertical mosfet structure, igbt manufacturing, superjunction mosfet
Power MOSFET Trench Process Technology is the specialized semiconductor manufacturing flow that creates vertical transistor structures capable of switching tens to hundreds…
power MOSFET IGBT, SiC GaN wide bandgap, breakdown field thermal conductivity, Schottky diode power, thyristor SCR grid, EV inverter device selection, switching frequency voltage tradeoff
Power semiconductors are devices purpose-built to handle high voltage — roughly 100 volts up to 10 kilovolts — and high current, from single-digit amps up into the thousands…
igbt, power mosfet, sic power, gan power device
Wide bandgap (WBG) power semiconductors, gallium nitride (GaN) High-Electron-Mobility Transistors (HEMT), and silicon carbide (4H-SiC) power MOSFETs constitute the foundational…
igbt power module, silicon carbide mosfet, wide bandgap power, power conversion semiconductor
Wide bandgap (WBG) power semiconductors, gallium nitride (GaN) High-Electron-Mobility Transistors (HEMT), and silicon carbide (4H-SiC) power MOSFETs constitute the foundational…
silicon carbide ev, igbt ev traction, wide bandgap power switch, ev inverter efficiency
Wide bandgap (WBG) power semiconductors, gallium nitride (GaN) High-Electron-Mobility Transistors (HEMT), and silicon carbide (4H-SiC) power MOSFETs constitute the foundational…
DBC direct bonded copper substrate, parasitic inductance switching, thermal cycling fatigue, traction inverter module, electrical thermal co-optimization, bond wire solder joint reliability
A power semiconductor module is an integrated package platform that combines power die, substrates, and cooling paths together into a single assembled unit specifically engineered…