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Glossary

132 technical terms and definitions

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installation qualification

equipment installation qualification, semiconductor equipment qualification, tool installation qualification, installation qualification protocol

Installation qualification (IQ) is the documented demonstration that semiconductor manufacturing equipment, its facilities hookups, safety provisions, software baseline…

integrated circuit

IC, microchip, silicon chip, Jack Kilby, Robert Noyce, planar process, Moore's law

An integrated circuit is a complete electronic circuit, with its transistors, resistors, capacitors and the wiring between them, fabricated together on a single small piece…

integrated differential phase contrast

idpc, idpc-stem, integrated dpc, integrated differential phase contrast stem, light element stem imaging, idpc semiconductor interface

High-angle annular dark-field STEM makes heavy atomic columns easy to recognize because strong high-angle scattering creates intuitive bright contrast, but that same weighting can…

integrated metrology

metrology

Integrated metrology places measurement capability inside a process chamber, on a cluster-tool platform, or immediately adjacent to the production module so results are available…

interconnect topology design

network on chip topology, fat tree interconnect, torus mesh topology, dragonfly topology hpc

Interconnect Topology Design — Interconnect topology defines the physical and logical arrangement of communication links between processors, memory, and I/O devices in parallel…

interference

metrology

Interference in analytical metrology is any signal or effect that causes the measurement result to differ from the true value of the analyte — encompassing spectral overlaps…

interlock

safety interlock, equipment interlock, semiconductor equipment interlock, process safety interlock

An interlock is an engineered control that prevents a semiconductor manufacturing tool from entering or remaining in a hazardous state unless defined safety conditions are…

intermetallic formation

packaging

Intermetallic formation is the metallurgical reaction at bonding interfaces where wire and pad metals form compound layers during and after bonding - controlled intermetallic…

interposer

silicon interposer, packaging interposer, cowos, 2.5d packaging, business and strategy

Interposers are the substrates that carry 2.5D integration: a die-to-die wiring layer dense enough to route thousands of connections between chiplets that sit side by side.…

intrinsic carrier concentration ni

bandgap temperature dependence varshni passler, effective density of states temperature scaling, lattice expansion electron phonon coupling, dark saturation current reliability, wide-bandgap semiconductors sic gan

Intrinsic Carrier Concentration and Temperature Kinetics of Energy Bandgaps: From Quantum Theory to Device Engineering Executive Summary The intrinsic carrier concentration…

inverse lithography technology convergence prediction machine learning

inverse lithography technology convergence prediction, inverse lithography technology, lithography technology convergence, technology convergence prediction

Inverse Lithography Technology Convergence Prediction with Machine Learning Introduction & Motivation Inverse Lithography Technology Convergence Prediction with Machine Learning…

inverse lithography technology (ilt)

inverse lithography technology, ilt, lithography

Inverse Lithography Technology (ILT) is a computational lithography approach that treats mask design as a mathematical inverse problem — given the desired wafer pattern (target)…

inverse photoemission spectroscopy

ipes, metrology

Inverse photoemission spectroscopy (IPES) probes unoccupied electronic states by injecting electrons into a sample and detecting photons emitted when those electrons decay…

inverse problems

inverse problem, ill-posed problems, regularization, parameter estimation, OPC, scatterometry, virtual metrology

Inverse Problems 1. Introduction to Inverse Problems 1.1 Mathematical Definition In mathematical terms, a forward problem is defined as: where: = input parameters (process…

ion channeling

ion channeling metrology, crystal channeling, rbs channeling, channeling minimum yield, implant damage analysis, impurity lattice location

A silicon wafer can look chemically correct in a random Rutherford backscattering spectrum while still containing implantation disorder, epitaxial defects, or dopants displaced…

ion chromatography

metrology

Spectroscopic ellipsometry and inline optical wafer metrology constitute the non-destructive physical measurement and defect detection disciplines that govern yield control across…

ion implantation

dopant, channeling, annealing, amorphization, junction depth, semiconductor doping, beamline implanter, doping

Ion implantation, atomic doping profile engineering, and advanced millisecond thermal annealing constitute the fundamental semiconductor manufacturing disciplines required…

ion implantation doping semiconductor

implant dose energy profile, channeling implant amorphization, dopant activation anneal, ultra shallow junction implant, ion implantation

Ion implantation, atomic doping profile engineering, and advanced millisecond thermal annealing constitute the fundamental semiconductor manufacturing disciplines required…

ion implantation process

ion implantation, ion implant semiconductor, dopant implantation, implant dose energy, channeling implant

Ion implantation, atomic doping profile engineering, and advanced millisecond thermal annealing constitute the fundamental semiconductor manufacturing disciplines required…