FinFET transistor technology

FinFET transistor technology scaling, extending the fin architecture across multiple successive process node generations, has required progressively thinner fins, taller fins to maintain adequate drive current within a shrinking footprint, and tighter fin pitch, each of which has added further fin-patterning and process-integration difficulty at each successive node. This continuous need for ever-thinner, ever-more-tightly-packed fins at each new process node is ultimately what motivated the transition from FinFET to gate-all-around nanosheet transistors at the most advanced nodes, since nanosheet architecture offers a different scaling path once FinFET's own fin-thinning approach reaches its practical limits.