FinFET transistor technology

FinFET transistor technology's three-sided gate wrap around a thin vertical silicon fin channel delivers substantially reduced subthreshold leakage current and improved drive-current-to-leakage ratio compared to planar MOSFETs at equivalent gate length, which is precisely why FinFET became the dominant transistor architecture across the 22nm through roughly 5nm process node range. This leakage and drive-current advantage over planar transistors is the fundamental electrical benefit that justified FinFET's added fin-patterning and process-integration complexity relative to simpler planar transistor fabrication.