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29,259 technical terms and definitions

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etch filmstack

etch film stack, etch film stacks, filmstack boundaries, gate filmstack, contact filmstack, etch film vs filmstack

An etch filmstack is the complete, ordered sequence of thin-film material layers present at a specific planar coordinate on a semiconductor wafer, defined from the uppermost…

etch first wafer effect budget

etch first-wafer effect budget, etch lot start wafer budget, etch opening wafer conditioning budget

Etch First Wafer Effect Budget An etch first wafer effect budget accounts for the difference in etch behaviour between the opening wafers of a lot and the steady state reached…

etch footing budget

etch sidewall footing budget, etch base corner footing budget, etch foot residual budget

Etch Footing Budget An etch footing budget defines how much unremoved material an integration can tolerate at the base of a sidewall, and the evidence needed to measure…

etch gas flow ratio budget

etch gas ratio budget, etch etchant additive ratio budget, etch flow ratio budget

Etch Gas Flow Ratio Budget An etch gas flow ratio budget bounds the balance between the etchant and the additive or diluent gases, and records the conditions under which that…

what is an etch hfo2 filmstack

etch-hfo2-etch-filmstack, etch hfo2 filmstack, hfo2 etch filmstack, hkmg hfo2 filmstack, high-k gate filmstack, hfo2 dielectric stack

An etch hafnium oxide filmstack (etch filmstack) is an atomic-scale layered material structure engineered into high- metal gate (HKMG) transistors, gate-all-around (GAA)…

what is an etch hfo2 process iep endpoint algorithm

etch-hfo2-iep-endpoint-algorithm, etch hfo2 process iep endpoint algorithm, hfo2 etch iep endpoint algorithm, hfo2 iep endpoint, high-k etch iep endpoint, hafnium oxide iep endpoint

An etch hafnium oxide process Interferometric Endpoint algorithm (etch process IEP endpoint algorithm) is an ultra-violet sub-nanometer optical phase and reflectance metrology…

what is an etch hfo2 process oes endpoint algorithm

etch-hfo2-oes-endpoint-algorithm, etch hfo2 process oes endpoint algorithm, hfo2 etch oes endpoint algorithm, hfo2 oes endpoint, high-k etch oes endpoint, hafnium oxide oes endpoint

An etch hafnium oxide process Optical Emission Spectroscopy endpoint algorithm (etch process OES endpoint algorithm) is a specialized multi-spectral trace-element diagnostic…

etch icp chamber iadf

icp chamber iadf, etch ion angular distribution function, ion angular distribution function etch, ion angle distribution icp, iadf plasma etch, icp ion angle spread, wafer ion angular distribution

The ion angular distribution function in an ICP etch chamber is set by one ratio — ion thermal energy divided by sheath voltage — and at production conditions (5 mTorr Ar, 200 V…

etch icp chamber iadf math modeling

icp iadf mathematical modeling, icp iadf modeling, etch iadf modeling, icp ion angular distribution model, icp sheath iadf simulation, inductive plasma iadf model, pic mcc icp iadf, feature scale icp iadf model

The mathematical modeling of the ICP ion angular distribution is fundamentally a differential charging problem, because while the inductive plasma chamber delivers an extremely…

etch icp chamber

icp etch chamber, inductively coupled plasma etch chamber, inductively coupled etch reactor, high density plasma etch chamber, transformer coupled plasma etch, icp source chamber, icp chamber hardware, icp chamber tuning

An ICP etch chamber is built around a dielectric window that must do three jobs at once: hold off one atmosphere of pressure across a 300 mm span — 730 kilograms of force — while…

etch icp chamber iedf

icp chamber iedf, etch ion energy distribution function, ion energy distribution function etch, ion energy distribution icp, iedf plasma etch, icp ion energy spectrum, wafer ion energy distribution

The ion energy distribution function in an ICP etch chamber is controlled by one independent knob — the bias electrode — that sets the peak ion energy without changing the ion…

etch icp chamber iedf math modeling

icp iedf mathematical modeling, icp iedf modeling, etch iedf modeling, icp ion energy distribution model, icp sheath iedf simulation, inductive plasma iedf model, pic mcc icp iedf, reduced order icp iedf model

The mathematical modeling of the ICP ion energy distribution function is ultimately a measurement inversion problem: every experimental IEDF is the true plasma distribution…

etch icp chamber math modeling

icp chamber mathematical modeling, icp chamber modeling, inductively coupled plasma model, icp plasma simulation, icp reactor model, icp multiphysics model, icp digital twin, icp chamber simulation

Etch ICP chamber math modeling is organized around one physical fact that determines almost everything else: inductive power does not fill the chamber, it stops in a thin layer…

etch icp chamber reactor plasma pic-mcc full phase space kinetic modeling

icp pic-mcc phase space etch plasma, kinetic icp plasma etch phase space model, icp pic-mcc full dimensional etch, icp etch plasma kinetic ion electron modeling

An inductively-coupled plasma etch chamber drives PIC-MCC simulations into a fundamentally harder computational regime than a CCP because the plasma density is 50 times higher: 5…

what is etch iep endpoint

etch-iep-endpoint, etch iep endpoint, iep endpoint, interferometric endpoint, laser interferometry etch, laser reflectometry endpoint, in situ interferometry etch

An etch Interferometric Endpoint (IEP Endpoint)—also known as in situ laser reflectometry or interferometric endpoint detection—is an optical metrology technique that measures…

what is an etch iep endpoint algorithm

etch-iep-endpoint-algorithm, etch iep endpoint algorithm, iep endpoint algorithm, interferometric endpoint algorithm, laser reflectometry algorithm, fringe counting algorithm, fringe tracking algorithm

An etch Interferometric Endpoint algorithm (etch IEP endpoint algorithm)—also known as an in situ reflectometry fringe-tracking algorithm—is a computational framework that…

etch iso-dense cd bias budget

etch iso dense cd bias budget, etch iso-dense bias budget, etch pattern-density cd bias budget

Etch Iso-Dense CD Bias Budget An etch iso-dense CD bias budget defines how far an isolated feature's post-etch width may differ from a dense feature's width drawn at the same…

etch loading budget

pattern density etch budget, etch clearing time budget, microloading time budget

Etch Loading Budget An etch loading budget accounts for differences in clearing time caused by the patterned wafer, then checks whether the extra exposure is acceptable. It…

etch loading effect microloading bias prediction machine learning

etch loading effect microloading bias prediction, etch loading effect, loading effect microloading, effect microloading bias, microloading bias prediction

Etch Loading Effect Microloading Bias Prediction with Machine Learning Introduction & Motivation Etch Loading Effect Microloading Bias Prediction with Machine Learning addresses…

etch mask erosion budget

mask edge retreat budget, mask thinning budget, etch mask faceting budget

Etch Mask Erosion Budget An etch mask erosion budget checks whether a patterned mask survives with enough thickness and the required lateral shape throughout pattern transfer.…

etch mask open budget

etch hard mask open budget, etch barc open budget, etch mask opening cd budget

Etch Mask Open Budget An etch mask open budget accounts for the pattern-transfer step that opens the anti-reflective coating and hard mask before the main etch, and bounds…

etch metrology guard band

etch measurement acceptance margin, etch uncertainty decision rule, etch dimensional guard band

Etch Metrology Guard Band An etch metrology guard band separates a product tolerance limit from a measurement acceptance limit under a stated decision rule. It makes room for…

etch metrology sampling plan

etch wafer site sampling, etch measurement sampling hierarchy, etch sample coverage plan

Etch Metrology Sampling Plan An etch metrology sampling plan specifies which wafers, locations, features and repeated measurements will support a defined process decision. It…

etch micromasking budget

etch micromask budget, etch grass budget, etch floor pillar budget

Etch Micromasking Budget An etch micromasking budget defines how many residual pillars or spikes an etched surface can tolerate, and the evidence needed to detect them, identify…

etch microtrenching budget

etch microtrench depth budget, etch corner recess budget, etch local floor recess budget

Etch Microtrenching Budget An etch microtrenching budget defines the allowed local recess near a feature's sidewall feet and the evidence needed to verify it. It keeps the deepest…

etch modeling

plasma etch, RIE, reactive ion etching, etch simulation, DRIE

Semiconductor Manufacturing Process: Etch Modeling 1. Introduction Etch modeling is one of the most complex and critical areas in semiconductor fabrication simulation. As device…

etch necking budget

etch minimum opening budget, etch local constriction budget, etch neck clearance budget

Etch Necking Budget An etch necking budget defines the minimum local opening that must remain and the evidence needed to verify it through the relevant process steps. It keeps…

etch notching budget

etch lateral notch budget, etch interface undercut budget, etch notch width budget

Etch Notching Budget An etch notching budget defines the allowed local lateral removal at a feature base or interface and the resulting dimensions that must remain. It links…

what is an etch oes endpoint

etch-oes-endpoint, etch oes endpoint, oes endpoint, optical emission spectroscopy endpoint, plasma etch oes, endpoint detection oes, oes endpoint detection

An etch Optical Emission Spectroscopy endpoint (etch OES endpoint) is a non-invasive, in situ plasma diagnostic and process control methodology that monitors the characteristic…

what is an etch oes endpoint algorithm

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An etch Optical Emission Spectroscopy endpoint algorithm (etch OES endpoint algorithm) is a specialized real-time digital signal processing (DSP) and statistical decision-making…

etch open area endpoint budget

etch endpoint open area budget, etch low open area endpoint budget, etch endpoint signal to noise budget

Etch Open Area Endpoint Budget An etch open area endpoint budget accounts for how the strength of an optical endpoint signal scales with the exposed area of the film being etched…

etch overetch budget

etch over etch time budget, etch additional clearing budget, etch overetch protection window

Etch Overetch Budget An etch overetch budget compares the additional removal needed to clear required features with the damage or material loss that the rest of the stack can…

etch passivation

PASS, Al corrosion passivation

Etch Passivation (PASS) Passivation can mean protection during etching or a post-etch treatment that reduces corrosion or reactivity. Place the step in context Identify…

etch pattern collapse budget

etch structure collapse budget, etch feature deflection budget, etch clean dry collapse budget

Etch Pattern Collapse Budget An etch pattern collapse budget defines the structural condition and clearances that must survive the etch-related process sequence. It includes…

what is an etch photoresist filmstack

etch-photoresist-etch-filmstack, etch photoresist filmstack, photoresist etch filmstack, tri-layer litho filmstack, si-arc soc filmstack, photoresist stack

An etch photoresist filmstack (etch photoresist etch filmstack) is an engineered multi-layer lithographic pattern-transfer laminate—universally deployed in tri-layer…

etch plasma damage budget

etch plasma induced damage budget, etch pid budget, etch subsurface damage budget

Etch Plasma Damage Budget An etch plasma damage budget defines how much altered material an integration can tolerate beneath or beside an etched surface, and the evidence needed…

etch plasma dynamics and ml prediction

etch plasma dynamics ml prediction, etch plasma, dynamics ml prediction, 100v amu lam ml pid rie, etch plasma dynamics, plasma dynamics ml, plasma dynamics, dynamics ml, ml prediction

Etch Plasma Dynamics and ML Prediction Introduction & Motivation Reactive ion etching (RIE) is critical for semiconductor manufacturing. Etch plasma dynamics directly determine…

etch plasma ignition budget

etch ignition latency budget, etch startup ignition budget, etch plasma startup confirmation budget

Etch Plasma Ignition Budget An etch plasma ignition budget defines the allowed startup behavior, the evidence that confirms ignition and the disposition of wafers exposed…

etch plasma modeling

plasma etch modeling, plasma etch physics, ion bombardment, reactive ion etch, RIE

Etch Profile Mathematical Modeling 1. Introduction Plasma etching is a critical step in semiconductor manufacturing where material is selectively removed from a wafer surface.…

etch plasma surface md modeling

plasma surface molecular dynamics, etch molecular dynamics modeling, ion radical surface interaction, atomistic etch simulation

Etch Plasma–Surface Molecular Dynamics (MD) Modeling resolves the femtosecond-to-nanosecond atomic trajectories that turn an incident ion, radical, neutral, or reaction product…

what is an etch polysilicon filmstack

etch-polysilicon-etch-filmstack, etch polysilicon filmstack, polysilicon etch filmstack, poly etch filmstack, gate poly etch filmstack, polysilicon gate stack

An etch polysilicon filmstack (etch polysilicon etch filmstack) is an engineered multi-layer material stack designed for high-fidelity pattern transfer in replacement metal gate…

what is an etch polysilicon process iep endpoint algorithm

etch-polysilicon-iep-endpoint-algorithm, etch polysilicon process iep endpoint algorithm, polysilicon etch iep endpoint algorithm, polysilicon iep endpoint, gate etch endpoint algorithm

An etch polysilicon process Interferometric Endpoint algorithm (etch polysilicon process IEP endpoint algorithm) is an optical fringe-tracking and phase-inversion metrology system…

what is an etch polysilicon process oes endpoint algorithm

etch-polysilicon-oes-endpoint-algorithm, etch polysilicon process oes endpoint algorithm, polysilicon etch oes endpoint algorithm, poly etch oes endpoint, polysilicon oes endpoint, poly gate endpoint

An etch polysilicon process Optical Emission Spectroscopy endpoint algorithm (etch polysilicon process OES endpoint algorithm) is a real-time multi-spectral signal processing…

etch post-maintenance qualification

etch post maintenance qualification, etch chamber recovery qualification, etch maintenance process verification

Etch Post-maintenance Qualification Etch post-maintenance qualification establishes whether the intended process performance is supported after a defined chamber intervention. It…

chemical etching

selective etching, selective chemical etch, GAA channel release, sacrificial layer removal

Chemical etching. uses reaction chemistry chosen to remove a target material faster than adjacent masks, stop layers, channels, spacers, liners, or substrates. Selectivity is…

etch process flow

Etch Process Flow An etch process flow is the sequence of preparation, pattern transfer, clearing and verification around an etch step. It describes decisions and dependencies…

etch process semiconductor

plasma etch reactive ion, anisotropic isotropic etch, etch selectivity chemistry, atomic layer etching

Semiconductor Etch Processes are the subtractive patterning techniques that selectively remove material from the wafer according to photoresist or hard mask patterns — ranging…

etch process window map

etch multi response window, etch recipe window overlap, etch operating window map

Etch Process Window Map An etch process window map shows the operating region in which all specified process responses meet their requirements. It connects settings…

what is an etch profile

etch-profile, etch profile, sidewall angle, profile uniformity, bowed profile, tapered profile, undercut profile, aspect ratio dependent etching, RIE lag

An etch profile is the cross-sectional geometry, sidewall contour, and bottom surface morphology of a patterned feature formed by anisotropic or isotropic chemical and physical…