1,296 technical terms and definitions
plasma etch profile, arde, rie lag, aspect ratio dependent etch, microloading, level set etch, etch
Aspect-ratio-dependent etching and microloading are fundamental plasma transport phenomena in reactive ion etching where the instantaneous material removal rate diminishes…
tapered profile etch, re entrant undercut profile, bowed sidewall etch, vertical sidewall etch profile control
An etch profile is named by comparing the sidewall angle to a single reference line — straight down — and the four names that result (vertical, tapered, bowed, re-entrant)…
etch profile selectivity control, etch profile selectivity, profile selectivity control, etch profile, profile selectivity, selectivity control
Etch Profile Selectivity Control with Machine Learning Introduction & Motivation Etch Profile Selectivity Control with Machine Learning addresses a central problem in plasma etch…
plasma processing controlling etch profile and selectivity in multi-layer etch sequences, plasma processing controlling, processing controlling etch, controlling etch profile, etch profile
Plasma Processing: Controlling etch profile and selectivity in multi-layer etch sequences Introduction & Motivation Plasma Processing: Controlling etch profile and selectivity…
etch profile selectivity control, etch profile selectivity, profile selectivity control, etch profile, profile selectivity, selectivity control
Etch Profile Selectivity Control with Machine Learning Introduction & Motivation Etch Profile Selectivity Control with Machine Learning addresses a central problem in plasma etch…
etch
Etch proximity effects refer to how the etch rate and etch profile of a feature depend on the local pattern density and geometry — features in dense arrays etch differently than…
etch plasma pulsing budget, etch pulse duty cycle budget, etch synchronized pulsing budget
Etch Pulsed Plasma Budget An etch pulsed plasma budget bounds the pulsing of source or bias power (duty cycle, frequency and synchronization) and records how it shifts…
etch waiting time budget, etch queue interval budget, etch to clean queue budget
Etch Queue Time Budget An etch queue time budget tracks the allowed elapsed interval between specified process events under specified environmental conditions. It connects…
etch monitor drift allowance, etch rate change budget, etch drift monitoring budget
Etch Rate Drift Budget An etch rate drift budget defines how much a qualified monitor response may change before investigation or other prescribed action is needed. It keeps…
predicting etch rate variation due to resist proximity and pattern, predicting etch rate, etch rate variation, rate variation due, variation due to, due to resist, to resist proximity
Predicting etch rate variation due to resist proximity and pattern Introduction & Motivation Predicting etch rate variation due to resist proximity and pattern addresses a central…
ccp etch plasma pic mcc equations, capacitively coupled plasma pic mcc model, ccp sheath circuit pic mcc equations
Etch Reactor CCP Chamber Plasma Particle-in-Cell with Monte Carlo Collisions (PIC-MCC) Equations Modeling predicts a capacitively coupled discharge by solving particle kinetics…
plasma etch multiscale grand challenge, reactor feature atomistic etch modeling, md dft level set plasma etch coupling
Etch Reactor Chamber Plasma Multi-Scale Coupling—the Grand Challenge—Modeling connects DFT and molecular dynamics surface physics to kinetic/Monte Carlo feature evolution…
etch plasma pic mcc governing equations, pic mcc equation set etch reactor, vlasov poisson mcc etch plasma, discrete pic mcc plasma equations
Etch Reactor Chamber Plasma Particle-in-Cell with Monte Carlo Collisions (PIC-MCC) Equations Modeling turns a kinetic plasma equation into a discrete, auditable simulation…
plasma etch surface reaction kmc, etch surface event catalog simulation, kinetic monte carlo plasma surface chemistry
Etch Reactor Chamber Plasma Surface-Reaction Kinetic Monte Carlo (kMC) Modeling predicts how discrete adsorption, abstraction, ion activation, bond breaking, desorption…
icp etch plasma pic mcc equations, inductively coupled plasma pic mcc model, icp maxwell kinetic plasma equations
Etch Reactor ICP Chamber Plasma Particle-in-Cell with Monte Carlo Collisions (PIC-MCC) Equations Modeling predicts an inductively coupled discharge by solving coil/network…
etch segment transition budget, etch recipe settling budget, etch transient exposure budget
Etch Recipe Transition Budget An etch recipe transition budget defines how changes between recipe segments are timed, observed and accepted. It records what happens between…
etch recipe revision tracking, etch recipe content identity, etch executed recipe traceability
Etch Recipe Version Control Etch recipe version control preserves the identity and history of a process program as it is changed, qualified, released and executed. It connects…
etch sidewall redeposition budget, etch fence residue budget, etch transferred material budget
Etch Redeposition Budget An etch redeposition budget defines the transferred material that an integration can tolerate and the evidence needed to assess its location, geometry…
etch reentrant sidewall budget, etch overhang fill budget, etch profile fill compatibility budget
Etch Reentrant Profile Budget An etch reentrant profile budget defines how much a feature's opening may narrow toward its top before the next fill step can no longer fill it…
post etch residue, post etch clean, polymer residue, via clean
Post-etch Clean (PEC / Wet Clean) Post-etch cleaning removes specified residues while preserving exposed materials. Place the step in context Identify the incoming surface…
etch residue acceptance budget, etch residue removal allowance, etch residue integrity budget
Etch Residue Budget An etch residue budget defines the remaining contamination that an integration can tolerate and the material changes allowed while removing it. It makes…
etch residue post-strip cleanliness prediction, etch residue post-strip, residue post-strip cleanliness, post-strip cleanliness prediction, etch residue, residue post-strip
Etch Residue Post-Strip Cleanliness Prediction with Machine Learning Introduction & Motivation Etch Residue Post-Strip Cleanliness Prediction with Machine Learning addresses…
rie etch chamber, reactive ion etching chamber, reactive ion etch reactor, parallel plate rie chamber, semiconductor rie chamber, rf plasma rie, rie chamber design, rie chamber hardware, rie process chamber
A reactive-ion-etch chamber is a single-frequency parallel-plate reactor where one 13.56 MHz generator simultaneously sustains the discharge and accelerates ions toward the wafer…
etch scalloping budget, drie scallop budget, bosch scallop depth budget
Etch Scallop Budget An etch scallop budget defines how large and how uniform the periodic sidewall ripples from a time-multiplexed etch may be, and the evidence needed to measure…
etch chemistry, plasma selectivity, selectivity ratio, oxide nitride selectivity, mask selectivity, fluorocarbon polymer, overetch budget, ARDE, aspect ratio dependent etching, fluorocarbon etch, atomic layer etch, cryogenic etch selectivity
Etch selectivity is quoted as a ratio of two removal rates, which makes it sound like a ratio of two chemistries. In a fluorocarbon plasma it is neither. A steady-state…
plasma etch chemistry, etch profile control, etch gas mixture
Plasma Etch Selectivity and Profile Control encompasses the precise tuning of plasma chemistry, bias power, pressure, and gas composition to achieve anisotropic removal of target…
filmstack selectivity budget, etch mask thickness budget, underlayer exposure budget
Etch Selectivity Budget An etch selectivity budget converts removal rates and exposure time into the thickness that a mask or protected layer can afford to lose. Selectivity alone…
selective etch chemistry, etch stop layer, etch ratio dielectric, plasma etch selectivity
Etch Selectivity in Semiconductor Processing is the fundamental plasma and wet etch parameter that quantifies the removal rate ratio between the target material and the material…
etch taper budget, bottom opening width budget, sidewall angle cd budget
Etch Sidewall Angle Budget An etch sidewall angle budget connects opening depth and wall taper to the bottom critical dimension that must remain usable. It complements a top-CD…
etch wall protection budget, etch passivation balance budget, etch protective film budget
Etch Sidewall Passivation Budget An etch sidewall passivation budget defines the protection needed on a feature's walls while preserving the removal, geometry and surface…
etch wall texture budget, etch roughness measurement budget, etch sidewall rms budget
Etch Sidewall Roughness Budget An etch sidewall roughness budget defines the allowed texture of an etched wall, the measurement scale and the evidence needed to assess it. It…
etch icp power budget, etch plasma density budget, etch source power flux budget
Etch Source Power Budget An etch source power budget bounds the plasma source (ICP or equivalent) power, expressed through the plasma density and species flux it produces…
typical etch film stack, film stack naming, etch stack materials, photoresist spacer polysilicon thermal oxide sacrificial oxide aluminum metal etch process flow
A typical etch film stack is named from the top down by what the plasma sees first, not by what the engineer cares about most — photoresist, then spacer, then the functional layer…
etch
An etch stop is an intentionally placed layer that etches much more slowly than the material above it, giving the process a controlled endpoint and protecting the structure…
cmp stop layer, stopper film, etch stop dielectric, nitride etch stop
Etch Stop Layer (ESL) is a thin film with very low etch rate relative to the overlying material — providing precise control over etch depth and enabling self-stopping processes…
etch stop thickness budget, stop layer opening budget, stop film survival budget
Etch Stop Layer Budget An etch stop layer budget checks that a layer survives the step in which it protects an underlayer, and that any later stop-opening step preserves the next…
etch selectivity margin, high aspect ratio overetch, film stress thickness drift, pattern fidelity protection, cross module process flow, selective stopping interface
Etch stop layer engineering is the deliberate film-stack design discipline that builds robust, selective stopping interfaces into a process flow specifically to enable precise…
process selectivity control, sin etch stop deposition, multi-layer etch stop design, contact etch landing
Etch Stop Layers and Process Integration — Thin dielectric films strategically placed within the device stack to provide precise etch termination control, enabling reliable…
process
Etch stop on crystal plane is the process effect where etching slows dramatically at specific crystal planes, creating a natural dimensional stop point - it is widely exploited…
etch mask taper transfer budget, etch sidewall taper origin budget, etch profile taper attribution budget
Etch Taper Transfer Budget An etch taper transfer budget defines how much of a feature's sidewall slope comes from the mask rather than the plasma, and the evidence needed…
etch wafer temperature budget, etch temperature history budget, etch thermal exposure budget
Etch Thermal Budget An etch thermal budget defines the allowed wafer temperature history during an etch sequence and the evidence used to show that the exposed materials remain…
etch timed etch depth budget, etch partial etch depth budget, etch blind etch depth budget
Etch Timed Depth Control Budget An etch timed depth control budget bounds the depth of a partial etch that has no stop layer, where depth is set by etch rate multiplied by time…
etch lateral undercut budget, etch stop layer undercut budget, etch mask undercut budget
Etch Undercut Budget An etch undercut budget defines how much lateral etching beneath a mask or stop layer an integration can tolerate, and the evidence needed to measure…
etch
Etch uniformity refers to the consistency of etch depth, etch rate, or critical dimension (CD) across the surface of a wafer, and it is one of the most important performance…
etch rate uniformity, center to edge etch, plasma uniformity control, etch chamber tuning
Etch Uniformity Across the Wafer is the plasma etch engineering discipline focused on achieving identical etch rate, etch depth, profile angle, and selectivity at every point…
simulation
Etching Simulation is the TCAD computational modeling of material removal processes — including wet chemical etching, reactive ion etching (RIE), atomic layer etching (ALE)…
ethereum smart contracts, ethereum smart, smart contracts
Ethereum Smart Contracts Introduction & Motivation Ethereum Smart Contracts addresses a central problem in blockchain process control and gas-cost-execution-pricing prediction…
IEEE 802.3, Robert Metcalfe, Xerox PARC, ethernet frame, MAC address, CSMA/CD, twisted pair
Ethernet is the dominant wired networking technology for local networks: a family of standards, published by the IEEE as 802.3, that defines how devices on a shared or switched…
ethernet packet collision rate prediction, ethernet packet collision, packet collision rate, collision rate prediction, ethernet packet, packet collision, collision rate
Ethernet Packet Collision Rate Prediction with Machine Learning Introduction & Motivation Ethernet Packet Collision Rate Prediction with Machine Learning addresses a central…
bias, fairness
AI Ethics, Bias, and Fairness Types of Bias in ML Systems Data Bias Type Description Example Selection bias Non-representative training data Medical AI trained only on one…