sti etch film

# STI Etch Film

STI Etch Film describes the target and protected films in this removal module.

## Identify the target film

Name the material intended for removal separately from the mask and the protected landing. Measure incoming thickness and surface state; film names alone do not specify etch behavior.

## Integration context

Shallow trench isolation forms a trench in silicon, not merely a hole in oxide. PR pattern transfer first opens the hard-mask stack. Silicon etching establishes isolation geometry; later liner formation, dielectric fill and planarization complete the isolation structure.

## What to verify

Check trench depth, width, corner shape, mask loss and later fill quality.

Before selecting removal conditions, identify all exposed neighboring materials and the amount of loss each can tolerate. Verify the result using the measurements appropriate to the structure, then check that the surface is suitable for the next deposition, contact or clean step.

## Related terminology

sti etch film. Short abbreviations are local process vocabulary and can have other meanings; use the full module name when searching.

## Source and scope

[Silicon and dielectric etch capabilities](https://www.nanofab.ualberta.ca/capabilities/plasma-etch/). The diagram is an original teaching schematic. Layer choices and process families describe an example rather than a universal manufacturing recipe.