oxide spacer

# Oxide Spacer (TEOS)

An oxide spacer uses a silicon-oxide film; TEOS names a possible deposition precursor, not the final spacer material.

## Read the retained sidewall

A conformal coating covers both horizontal and vertical surfaces before etchback. The intended final feature is the retained sidewall material, not a uniformly thinned blanket film.

## Integration context

TEOS-derived oxide can be deposited with different process conditions, producing different film properties. Spacer formation depends on conformality and directional clearing. Replacing a nitride spacer with an oxide spacer also changes its response to subsequent cleans and etches.

## What to verify

Measure film coverage and spacer dimensions, and assess compatibility with later oxide-removal steps.

Before selecting removal conditions, identify all exposed neighboring materials and the amount of loss each can tolerate. Verify the result using the measurements appropriate to the structure, then check that the surface is suitable for the next deposition, contact or clean step.

## Related terminology

oxide spacer, TEOS spacer. Short abbreviations are local process vocabulary and can have other meanings; use the full module name when searching.

## Source and scope

[Selective nitride spacer etching](https://plasma.oxinst.com/assets/uploads/documents/3182_PT_Process_News_Mar2015_Low_res_Spreads.pdf). The diagram is an original teaching schematic. Layer choices and process families describe an example rather than a universal manufacturing recipe.