i-line photoresist

# I-line / KrF / ArF Photoresist

I-line, KrF and ArF identify exposure families commonly associated with 365 nm, 248 nm and 193 nm light, respectively.

## Separate imaging and transfer

Lithography establishes the mask pattern, and etching transfers it. A resist formulation must meet both the exposure conditions and the downstream mask-survival requirements.

## Integration context

The exposure family alone does not define etch resistance, strip chemistry, tone or thickness. A resist must be selected together with its optical stack and pattern-transfer requirements. A thinner imaging layer may require a separate hard mask rather than simply extending the etch time.

## What to verify

Use the actual product and process data; compare profile, mask loss and post-etch removal on the intended filmstack.

Before selecting removal conditions, identify all exposed neighboring materials and the amount of loss each can tolerate. Verify the result using the measurements appropriate to the structure, then check that the surface is suitable for the next deposition, contact or clean step.

## Related terminology

i-line photoresist, KrF photoresist, ArF photoresist, i-line PR, KrF PR, ArF PR, I-line / KrF / ArF PR. Short abbreviations are local process vocabulary and can have other meanings; use the full module name when searching.

## Source and scope

[Photoresist exposure families](https://www.fujifilm.com/us/en/business/semiconductor-materials/photoresists/krf). The diagram is an original teaching schematic. Layer choices and process families describe an example rather than a universal manufacturing recipe.