FinFET transistor architecture scaling

FinFET transistor architecture scaling eventually reached practical limits, since fins could only be made so thin and so tall before manufacturing variability and performance degraded, which is why the industry transitioned to gate-all-around (GAA) nanosheet transistors at the most advanced process nodes, extending the same three-dimensional gate-wraparound electrostatic-control principle FinFET introduced but using horizontally-stacked nanosheet channels instead of a single vertical fin. This FinFET-to-nanosheet transition reflects a continuation of the same underlying electrostatic-control strategy rather than an entirely different architectural approach, even though the specific channel geometry changed substantially between the two transistor generations.