EUV resist

EUV resist formulation has to simultaneously optimize sensitivity (how much exposure dose is needed to fully react), resolution (how fine a feature the resist can faithfully reproduce), and stochastic defect resistance, three properties that frequently pull against each other, since increasing sensitivity to reduce required dose can increase stochastic variation, while maximizing resolution can require resist properties that reduce photon absorption efficiency. This three-way trade-off, commonly summarized as the resist RLS (resolution-linewidth roughness-sensitivity) trade-off, is a central, unavoidable constraint EUV resist development has to navigate rather than optimize away entirely.